Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy

被引：3

作者：

Adachi, Masaki ^{[1
]}

Kato, Yuzo ^{[1
]}

Kato, Kimihiko ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Kondo, Hiroki ^{[1
]}

Takeuchi, Wakana ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

LA2O3-AL2O3 COMPOSITE FILMS; HFO2;

D O I：

10.1143/JJAP.50.04DA08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the local leakage current in Pr-oxide thin films formed on Si(001) and Si(111) substrate by conductive atomic force microscopy. In Pr-oxide films formed on Si(111) substrates, many current leakage spots are observed in current images compared to that on Si(001) substrates. We found that the current conduction mechanism in Pr-oxide films is considered a Poole-Frenkel conduction. The X-ray photoelectron spectroscopy analysis revealed that cubic Pr2O3 is preferentially formed near the Pr-oxide/Si(111) interface compared with Si(001) samples. We also found that O-2 annealing effectively reduces the leakage current in Pr-oxide films. It is considered that oxygen vacancies in Pr-oxide dominate the leakage current of oxide thin films. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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