Ultra-thin silicon dioxide layers on silicon: interface optimisation and characterisation at the atomic level

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作者：
Stegemann, Bert [1 ]
机构：
[1] Hochschule für Technik und Wirtschaft, Berlin, Germany
来源：
Galvanotechnik | 2010年 / 101卷 / 10期
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页码：2376 / 2385
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