Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells

被引:0
|
作者
Xu, Hao [1 ]
Toprasertpong, Kasidit [1 ]
Delamarre, Amaury [1 ]
Sodabanlu, Hassanet [1 ]
Watanabe, Kentaroh [1 ]
Nakano, Yoshiaki [1 ]
Sugiyama, Masakazu [1 ]
机构
[1] Department of Electrical Engineering and Information System, University of Tokyo, Bunkyo, Tokyo,113-8656, Japan
来源
Japanese Journal of Applied Physics | 2017年 / 56卷 / 08期
关键词
701.1 Electricity: Basic Concepts and Phenomena - 702.3 Solar Cells - 712.1 Semiconducting Materials - 712.1.1 Single Element Semiconducting Materials - 723.2 Data Processing and Image Processing - 741 Light; Optics and Optical Devices - 804 Chemical Products Generally - 933.1.2 Crystal Growth;
D O I
08MC06
中图分类号
学科分类号
摘要
30
引用
收藏
相关论文
共 50 条
  • [41] MICROSTRUCTURES OF (IN,GA)P ALLOYS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    FOLLSTAEDT, DM
    SCHNEIDER, RP
    JONES, ED
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3077 - 3087
  • [42] DIRECT GROWTH OF (ALGA)AS/GAAS QUANTUM WIRES BY METALORGANIC VAPOR-PHASE EPITAXY
    BERTRAM, D
    STOLZ, W
    GOBEL, EO
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 179 - 190
  • [43] ABRUPT MG DOPING PROFILES IN GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    LANDGREN, G
    RASK, M
    ANDERSSON, SG
    LUNDBERG, A
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 646 - 649
  • [44] BEHAVIOR AND MECHANISM OF STEP BUNCHING DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS
    SHINOHARA, M
    INOUE, N
    APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1936 - 1938
  • [45] Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy
    Gong, YN
    Mo, JJ
    Yu, HS
    Wang, L
    Xia, GQ
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (01) : 43 - 49
  • [46] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
    KUECH, TF
    POTEMSKI, R
    APPLIED PHYSICS LETTERS, 1985, 47 (08) : 821 - 823
  • [47] HIGH-EFFICIENCY ALGAAS SOLAR-CELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    CHUNG, BC
    FORD, CW
    ARAU, BA
    HAMAKER, HC
    RISTOW, ML
    SCHULTZ, JC
    VIRSHUP, GF
    WERTHEN, JG
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 486 - 490
  • [48] SI DELTA-DOPED LAYERS OF GAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    LI, G
    JAGADISH, C
    CLARK, A
    LARSEN, CA
    HAUSER, N
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 2131 - 2133
  • [49] FABRICATION OF GAAS/ALGAAS QUANTUM DOTS BY METALORGANIC VAPOR-PHASE EPITAXY ON PATTERNED GAAS SUBSTRATES
    MOTOHISA, J
    KUMAKURA, K
    KISHIDA, M
    YAMAZAKI, T
    FUKUI, T
    HASEGAWA, H
    WADA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1098 - 1101
  • [50] LOW-TEMPERATURE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE AND ZNSSE ONTO GAAS USING TERTIARYBUTYLSELENOL
    NISHIMURA, K
    NAGAO, Y
    SAKAI, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 134 (3-4) : 293 - 301