Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells

被引：0
|
作者：
Xu, Hao [1 ]
Toprasertpong, Kasidit [1 ]
Delamarre, Amaury [1 ]
Sodabanlu, Hassanet [1 ]
Watanabe, Kentaroh [1 ]
Nakano, Yoshiaki [1 ]
Sugiyama, Masakazu [1 ]
机构：
[1] Department of Electrical Engineering and Information System, University of Tokyo, Bunkyo, Tokyo,113-8656, Japan
来源：
Japanese Journal of Applied Physics | 2017年 / 56卷 / 08期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 702.3 Solar Cells - 712.1 Semiconducting Materials - 712.1.1 Single Element Semiconducting Materials - 723.2 Data Processing and Image Processing - 741 Light; Optics and Optical Devices - 804 Chemical Products Generally - 933.1.2 Crystal Growth;
D O I：
08MC06
中图分类号：
学科分类号：
摘要：
30
引用
收藏
相关论文
共 50 条
  • [31] HIGH-EFFICIENCY GAAS-BASED MULTIJUNCTION SOLAR-CELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    CHUNG, BC
    WICKHAM, KR
    RISTOW, ML
    WERTHEN, JG
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 801 - 806
  • [32] COMPOSITIONAL LATCHING IN GAAS1-XPX/GAAS METALORGANIC VAPOR-PHASE EPITAXY
    MIURA, Y
    ONABE, K
    XIONG, Z
    NITTA, Y
    FUKATSU, S
    SHIRAKI, Y
    ITO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4B): : L664 - L667
  • [33] GROUP-III HYDRIDE PRECURSORS FOR THE METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) OF (ALGA)AS/GAAS HETEROSTRUCTURES
    PROTZMANN, H
    MARSCHNER, T
    ZSEBOK, O
    STOLZ, W
    GOBEL, EO
    DORN, R
    LORBERTH, J
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 248 - 253
  • [34] Characterization of carbon-doped GaAs grown by metalorganic vapor-phase epitaxy
    Gong, YN
    Mo, JJ
    Yu, HS
    Wang, L
    Xia, GQ
    JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) : 271 - 278
  • [35] STEPWISE MONOLAYER GROWTH OF GAAS BY SWITCHED LASER METALORGANIC VAPOR-PHASE EPITAXY
    DOI, A
    AOYAGI, Y
    NAMBA, S
    APPLIED PHYSICS LETTERS, 1986, 49 (13) : 785 - 787
  • [36] THERMOELASTIC STRAIN IN ZNSE FILMS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    SHIBATA, N
    OHKI, A
    ZEMBUTSU, S
    KATSUI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04): : L487 - L489
  • [37] New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy
    Rebey, A
    Bchetnia, A
    Benjeddou, C
    El Jani, B
    Gibart, P
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) : 292 - 296
  • [38] EXCIMER LASER-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF CDTE ON GAAS
    ZINCK, JJ
    BREWER, PD
    JENSEN, JE
    OLSON, GL
    TUTT, LW
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1434 - 1436
  • [39] ZN DELTA-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    LI, G
    LINNARSSON, M
    JAGADISH, C
    JOURNAL OF CRYSTAL GROWTH, 1995, 154 (3-4) : 231 - 239
  • [40] GROWTH-BEHAVIOR OF GAAS IN METALORGANIC VAPOR-PHASE EPITAXY ONTO ZNSE
    FUNATO, M
    FUJITA, S
    FUJITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 4851 - 4854
12345