Dislocation climb in c-plane ALN films

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Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom [1 ]
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来源：
Appl. Phys. Express | 1882年 / 6卷
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
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摘要：
Sapphire - Aluminum nitride - Metallorganic vapor phase epitaxy - Film growth - III-V semiconductors
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