Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature

被引：0
|
作者：
机构：
[1] Jyothi, I.
[2] Janardhanam, V.
[3] Kim, Jong-Hee
[4] Yun, Hyung-Joong
[5] Jeong, Jae-Chan
[6] Hong, Hyobong
[7] Lee, Sung-Nam
[8] Choi, Chel-Jong
来源：
Choi, Chel-Jong (cjchoi@jbnu.ac.kr) | 1600年 / Elsevier Ltd卷 / 688期
关键词：
Gallium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Effect of thermal annealing on the Ir/Ag contact to p-type GaN
    Chuah, L. S.
    Hassan, Z.
    Teo, S. G.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2010, 356 (35-36) : 1863 - 1866
  • [42] Ohmic Contact Properties and Annealing Effect for Au/Ni on p-Type P-Doped ZnO
    Hu, Guangxia
    Gong, Hao
    Chor, E. F.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (09) : H740 - H743
  • [43] Microstructural investigation of Ni/Au ohmic contact on p-type GaN
    Kim, JK
    Je, JH
    Lee, JL
    Park, YJ
    Lee, BT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) : 4645 - 4651
  • [44] Electronic transport and Schottky barrier height of Ni contact on p-type GaN
    Lin, Yow-Jon
    Lee, Ching-Ting
    Chang, Shih-Sheng
    Chang, Hsing-Cheng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (09)
  • [45] Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
    Li, BJ
    Chua, SJ
    Nikolai, Y
    Wang, LS
    Sia, EK
    SOLID-STATE ELECTRONICS, 2003, 47 (04) : 601 - 605
  • [46] Electrical and structural properties of Pd/V/n-type InP (111) Schottky structure as a function of annealing temperature
    Naik, S. Sankar
    Reddy, V. Rajagopal
    Choi, Chel-Jong
    Bae, Jong-Seong
    SURFACE AND INTERFACE ANALYSIS, 2012, 44 (01) : 98 - 104
  • [47] Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN
    Kim, HK
    Adesida, I
    Seong, TY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1101 - 1104
  • [48] Influence of rapid thermal annealing on electrical and structural properties of Pd/Au Schottky contact to Ga-polarity GaN grown on Si (111) substrate
    Nirwal, Varun Singh
    Peta, Koteswara Rao
    Reddy, V. Rajagopal
    Kim, Moon Deock
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 705 : 782 - 787
  • [49] Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN
    K. Jagadeswara Reddy
    Varra Rajagopal Reddy
    P. Narasimha Reddy
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 333 - 338
  • [50] Behavior of temperature dependent electrical properties of Pd/Au Schottky contact to GaN grown on Si substrate by MBE
    Nirwal, Varun Singh
    Peta, Koteswara Rao
    MATERIALS RESEARCH EXPRESS, 2016, 3 (12)
12345