Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature

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机构：
[1] Jyothi, I.
[2] Janardhanam, V.
[3] Kim, Jong-Hee
[4] Yun, Hyung-Joong
[5] Jeong, Jae-Chan
[6] Hong, Hyobong
[7] Lee, Sung-Nam
[8] Choi, Chel-Jong
来源：
Choi, Chel-Jong (cjchoi@jbnu.ac.kr) | 1600年 / Elsevier Ltd卷 / 688期
关键词：
Gallium nitride;
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