Graviporosity of the porous silicon layers on the n-Si and p-Si substrates

被引：0
|
作者：
机构：
来源：
| 2001年 / Nauka卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] p-Si/Macro-Assembled Graphene/n-Si Heterojunction Near-Infrared Photodetector
    Chen, Yance
    Cao, Xiaoxue
    Wang, Suhao
    Liu, Lixiang
    Lv, Jianhang
    Liu, Xinyu
    Bodepudi, Srikrishna Chanakya
    Shen, Ying
    Sun, Haiyan
    Peng, Li
    Fang, Wenzhang
    Song, Jizhou
    Xu, Yang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2022, 21 : 789 - 793
  • [32] TiO2/n-Si/p-Si及n-PS/p-PS/Si的光伏特性
    向梅
    贾振红
    涂楚辙
    半导体光电, 2007, (02) : 218 - 220
  • [33] Cyclic voltammetry of semiconductor photoelectrodes III:: A comparison of experiment and theory for n-Si and p-Si electrodes
    Santangelo, PG
    Lieberman, M
    Lewis, NS
    JOURNAL OF PHYSICAL CHEMISTRY B, 1998, 102 (24): : 4731 - 4738
  • [34] SCHOTTKY CONTACTS OF GD-PT AND GD-V ALLOYS ON N-SI AND P-SI
    THOMPSON, R
    EIZENBERG, M
    TU, KN
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6763 - 6768
  • [35] Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
    Horvath, ZJ
    Adam, M
    Ducso, C
    Pinter, I
    Van Tuyen, V
    Barsony, I
    Gombia, E
    Mosca, R
    Makaro, Z
    SOLID-STATE ELECTRONICS, 1998, 42 (02) : 221 - 228
  • [36] Impedance of humidity sensitive metal/porous silicon/n-Si structures
    Yarkin, DG
    SENSORS AND ACTUATORS A-PHYSICAL, 2003, 107 (01) : 1 - 6
  • [37] Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy
    Filatova, E. O.
    Sokolov, A. A.
    Taracheva, E. Yu.
    Bagrov, I. V.
    TECHNICAL PHYSICS LETTERS, 2009, 35 (01) : 70 - 72
  • [38] Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection
    Zhao, Xiaolong
    Huang, Danyang
    He, Yongning
    Peng, Wenbo
    Li, Gaoming
    SOLID-STATE ELECTRONICS, 2022, 188
  • [39] N-Si (nitrogen-silicon)
    Okamoto, H
    JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION, 2005, 26 (03) : 293 - 294
  • [40] N-Si (nitrogen-silicon)
    H. Okamoto
    Journal of Phase Equilibria and Diffusion, 2005, 26 (3) : 293 - 294
12345