A highly efficient 3.5GHz inverse class-F GaN HEMT power amplifier

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Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivgen, 41296 Gothenburg, Sweden [1 ]
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Int. J. Microw. Wirel. Technol. | 1759年 / 3-4卷 / 317-324期
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摘要：
Gallium nitride
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