Polytype dependence of transition metal-related deep levels in 4H-, 6H- And 15R-SiC

被引：0
|
作者：
Grillenberger, J. [1 ]
Achtziger, N. [2 ]
Pasold, G. [1 ]
Witthuhn, W. [1 ]
机构：
[1] Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, DE-07743 Jena, Germany
[2] Fraunhofer-lnstitut für Integrierte Schaltungen IIS-A, Am Weichselgarten 3, DE-91058 Erlangen, Germany
来源：
| 2002年 / Trans Tech Publications Ltd卷 / 389-393期
关键词：
Crystal lattices - Deep level transient spectroscopy - Energy gap - Silicon carbide;
D O I：
10.4028/www.scientific.net/msf.389-393.573
中图分类号：
学科分类号：
摘要：
We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent lattice sites in Silicon Carbide on the level energies is discussed. © 2002 Trans Tech Publications.
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