Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

被引：0

作者：

20150900587254

机构：

[1] [1,Li, L.B.

[2] Chen, Z.M.

[3] Zang, Y.

来源：

Li, L.B. (xpu_lilianbi@163.com) | 1600年 / American Institute of Physics Inc.卷 / 117期

关键词：

The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850-∼-1050-°C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode; which releases most of the lattice-mismatch strain; and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900-°C; and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1-11)[1-1-2]Si//(0001)[-2110]6H-SiC. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000-°C; the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]Si//(0001)[2-1-10]6H-SiC. Along Si[110] orientation; the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001; the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487-×-1014-cm-2 and 1.217-×-1014-cm-2; respectively; which is much smaller than the theoretical calculation results. © 2015 AIP Publishing LLC;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[41] Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC
郝昕
陈远富
王泽高
刘竞博
贺加瑞
李言荣
Chinese Physics B, 2013, 22 (07) : 41 - 44
[42] TEM characterization of Si films grown on 6H-SiC (0001) C-face
Li Lianbi
Chen Zhiming
Xie Longfei
Yang Chen
MATERIALS LETTERS, 2013, 93 : 330 - 332
[43] 4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds
Maltsev, AA
Maksimov, AY
Yushin, NK
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 41 - 44
[44] Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)
Jernigan, GG
Stahlbush, RE
Das, MK
Cooper, JA
Lipkin, LA
APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1448 - 1450
[45] Fabrication and properties of AlGaN/GaInN double heterostructure grown on 6H-SiC(0001)(Si)
Amano, H
Sota, S
Nishikawa, M
Yoshida, M
Kawaguchi, M
Ohta, M
Sakai, H
Akasaki, I
GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 869 - 877
[46] Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si
Soares, G. V.
Baumvol, I. J. R.
Correa, S. A.
Radtke, C.
Stedile, F. C.
APPLIED PHYSICS LETTERS, 2009, 95 (19)
[47] Electronic structure of the Be acceptor centers in 6H-SiC
van Duijn-Arnold, A
Schmidt, J
Poluektov, OG
Baranov, PG
Mokhov, EN
PHYSICAL REVIEW B, 1999, 60 (23): : 15799 - 15809
[48] DEPOSITION OF SIC ON COMMERCIAL 6H-SIC SUBSTRATE
LEONHARDT, A
SCHONHERR, M
SELBMANN, D
STEPHAN, D
WOLF, E
ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S217 - S217
[49] Atomic structure of the 6H-SiC(0001) nanomesh
Chen, W
Xu, H
Liu, L
Gao, XY
Qi, DC
Peng, GW
Tan, SC
Feng, YP
Loh, KP
Wee, ATS
SURFACE SCIENCE, 2005, 596 (1-3) : 176 - 186
[50] Structure of Co deposited 6H-SiC(0001)
Chen, W
Xu, H
Loh, KP
Wee, ATS
SURFACE SCIENCE, 2005, 595 (1-3) : 107 - 114

← 1 2 3 4 5 →