Electroluminescence from one-dimensionally self-aligned si-based quantum dots with high areal dot density

被引：0
|
作者：
Makihara, Katsunori [1 ]
Deki, Hidenori [2 ]
Ikeda, Mitsuhisa [3 ]
Miyazaki, Seiichi [1 ]
机构：
[1] Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
[2] Faculty of Engineering, Hiroshima Kokusai Gakuin University, Hiroshima 739-0321, Japan
[3] Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 4 PART 2期
关键词：
Areal densities - Emission intensity - Near infrared region - Radiative recombination rate - Recombination efficiency - Self aligned structure - Si (100) substrate - Thermal oxidation;
D O I：
04DG08
中图分类号：
学科分类号：
摘要：
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