Electroluminescence from one-dimensionally self-aligned si-based quantum dots with high areal dot density

被引：0
|
作者：
Makihara, Katsunori [1 ]
Deki, Hidenori [2 ]
Ikeda, Mitsuhisa [3 ]
Miyazaki, Seiichi [1 ]
机构：
[1] Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
[2] Faculty of Engineering, Hiroshima Kokusai Gakuin University, Hiroshima 739-0321, Japan
[3] Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 4 PART 2期
关键词：
Areal densities - Emission intensity - Near infrared region - Radiative recombination rate - Recombination efficiency - Self aligned structure - Si (100) substrate - Thermal oxidation;
D O I：
04DG08
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Creation of a mixed-valence state from one-dimensionally aligned TTF utilizing the self-assembling nature of a low molecular-weight gel
    Kitahara, T
    Shirakawa, M
    Kawano, S
    Beginn, U
    Fujita, N
    Shinkai, S
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) : 14980 - 14981
  • [32] Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots
    Chang, WH
    Chou, AT
    Chen, WY
    Chang, HS
    Hsu, TM
    Pei, Z
    Chen, PS
    Lee, SW
    Lai, LS
    Lu, SC
    Tsai, MJ
    APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2958 - 2960
  • [33] Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate
    Chia, C. K.
    Zhang, Y. W.
    Wong, S. S.
    Yong, A. M.
    Chow, S. Y.
    Chua, S. J.
    Guo, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
  • [34] A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application
    Wang, Chen
    Zhao, Xiuli
    Liu, Hao
    Chao, Xin
    Zhu, Hao
    Sun, Qingqing
    ELECTRONICS, 2021, 10 (16)
  • [35] Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array
    Lee, Subaek
    Kim, Juri
    Kim, Sungjun
    FRONTIERS OF PHYSICS, 2024, 19 (06)
  • [36] Enhanced Electroluminescence From Si Quantum Dots-Based Light-Emitting Devices With Si Nanowire Structures and Hydrogen Passivation
    Zhai, Y. Y.
    Cao, Y. Q.
    Lin, Z. W.
    Qian, M. Q.
    Xu, J.
    Li, W.
    Xu, L.
    Chen, K. J.
    IEEE PHOTONICS JOURNAL, 2016, 8 (05):
  • [37] HIGH-RESOLUTION ELECTRON-BEAM AND DRY ETCH BASED PROCESS FOR SELF-ALIGNED 200 NM SI FETS
    NULMAN, J
    KRUSIUS, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 299 - 305
  • [38] Planar on-chip microsupercapacitors based on aminated graphene quantum dots with high areal power density and rapid frequency response capability
    Li, Xue-Ying
    Zhang, Yu
    Zhou, Yuan-Yuan
    Jiang, Wan-Ting
    Zhang, Guang Yu
    FERROELECTRICS, 2022, 594 (01) : 13 - 21
  • [39] Characterization of high-lateral-density well-aligned self-formed GaP/InP quantum dots and their laser operation
    Matsuda, S
    Asahi, H
    Watanabe, D
    Mori, J
    Asami, K
    Gonda, S
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1227 - 1228
  • [40] Mechanism of quantum yield enhancement in Si quantum dots by high-pressure water vapor annealing from single-dot studies
    Lu, Xi
    Zhou, Jingjian
    Gelloz, Bernard
    Sychugov, Ilya
    APPLIED PHYSICS LETTERS, 2024, 125 (07)
12345