Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

被引:0
|
作者
Luna, E. [1 ,2 ]
Trampert, A. [2 ]
Guzmán, A. [1 ]
Calleja, E. [1 ]
机构
[1] Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Escuela T´cnica Superior de Ingenieros (ETSI) de Telecomunicación, Universidad Polit´cnica de Madrid, Ciudad Universitaria s/n, 28040, Madrid, Spain
[2] Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
来源
Journal of Applied Physics | 2005年 / 98卷 / 04期
关键词
The authors acknowledge financial support from the Spanish MEC and the German DAAD. We also thank Dr. R. Hey (PDI) for his help in growing one of the samples and Dr. A. Hierro (ISOM); Dr; L; González; and Dr. Y. González (CNM-CSIC) for helpful discussions;
D O I
暂无
中图分类号
学科分类号
摘要
20
引用
收藏
相关论文
共 50 条
  • [41] EXPULSION OF CARRIERS FROM THE DOUBLE-BARRIER QUANTUM-WELL AND INVESTIGATION OF ITS SPECTRAL CONSEQUENCES
    CHYLA, WT
    DEERING, WD
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02): : 218 - 225
  • [42] ELASTIC-SCATTERING EFFECTS ON RESONANT TUNNELING IN DOUBLE-BARRIER QUANTUM-WELL STRUCTURES
    FERTIG, HA
    HE, S
    DASSARMA, S
    PHYSICAL REVIEW B, 1990, 41 (06): : 3596 - 3607
  • [43] GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
    Ma, B. S.
    Fan, W. J.
    Dang, Y. X.
    Cheah, W. K.
    Loke, W. K.
    Liu, W.
    Li, D. S.
    Yoon, S. F.
    Zhang, D. H.
    Wang, H.
    Tung, C. H.
    APPLIED PHYSICS LETTERS, 2007, 91 (05)
  • [44] Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 μm
    Luna, E
    Sánchez-Rojas, JL
    Guzmán, A
    Tijero, JMG
    Muñoz, E
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (01) : 105 - 107
  • [45] DEPENDENCE OF THE PERFORMANCE OF GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS ON DOPING AND BIAS
    GUNAPALA, SD
    LEVINE, BF
    PFEIFFER, L
    WEST, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6517 - 6520
  • [46] Piezoresistive effect study of double-barrier superlattice quantum well membrane
    National Key Lab. for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
    Guti Dianzixue Yanjiu Yu Jinzhan, 2007, 3 (290-294): : 290 - 294
  • [47] Intersubband optical absorption in strained double barrier quantum well infrared photodetectors
    Shi, JJ
    Goldys, EM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) : 83 - 88
  • [48] EXCITON DELOCALIZATION IN THIN DOUBLE-BARRIER GAAS/ALAS/(AL,GA)AS QUANTUM-WELL STRUCTURES
    MARTINEZPASTOR, J
    GURIOLI, M
    COLOCCI, M
    DEPARIS, C
    CHASTAINGT, B
    MASSIES, J
    PHYSICAL REVIEW B, 1992, 46 (04): : 2239 - 2243
  • [49] The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength
    Gusakov, Y
    Finkman, E
    Bahir, G
    Ritter, D
    APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2508 - 2510
  • [50] THEORY OF MAGNETOTUNNELING THROUGH DONORS IN THE QUANTUM-WELL OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    FROMHOLD, TM
    SHEARD, FW
    EAVES, L
    ACTA PHYSICA POLONICA A, 1992, 82 (05) : 737 - 740