Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon

被引：0
|
作者：
Ma, Xiangyang [1 ]
Fu, Liming [1 ]
Tian, Daxi [1 ]
Yang, Deren [1 ]
机构：
[1] State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
来源：
Journal of Applied Physics | 2005年 / 98卷 / 08期
关键词：
The authors would like to thank the financial supports from the Natural Science Foundation of China (Nos. 90207024 and 60225010); Program for New Century Excellent Talents in Universities; and; 863; project; (No; 2004AA3Z1142);
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