Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon

被引：0
|
作者：
Ma, Xiangyang [1 ]
Fu, Liming [1 ]
Tian, Daxi [1 ]
Yang, Deren [1 ]
机构：
[1] State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
来源：
Journal of Applied Physics | 2005年 / 98卷 / 08期
关键词：
The authors would like to thank the financial supports from the Natural Science Foundation of China (Nos. 90207024 and 60225010); Program for New Century Excellent Talents in Universities; and; 863; project; (No; 2004AA3Z1142);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
相关论文
共 50 条
  • [31] Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon
    Binetti, S
    Somaschini, R
    Le Donne, A
    Leoni, E
    Pizzi, S
    Li, D
    Yang, D
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) : 13247 - 13254
  • [32] Effect of iron on oxygen precipitation in nitrogen-doped Czochralski silicon
    Zhang, XW
    Yang, DR
    Fan, RX
    Zhang, JX
    Que, DL
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5502 - 5505
  • [33] Evolution of nitrogen pairs and nitrogen-oxygen complexes in nitrogen-doped Czochralski silicon
    Li, Ming
    Yang, Deren
    Ma, Xiangyang
    Cui, Can
    Que, Duanlin
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 3090 - +
  • [34] EVALUATION OF INTRINSIC GETTERING OF GOLD BY OXIDE PRECIPITATION IN CZOCHRALSKI SILICON
    PIETILA, DA
    MASSON, DB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : 686 - 690
  • [35] New intrinsic gettering process in Czochralski-silicon wafer
    Li, YX
    Liu, CC
    Guo, HY
    Wang, X
    Pan, MX
    Xu, YS
    Yang, DR
    Que, DL
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 277 - 279
  • [36] Umbrella-like precipitates in nitrogen-doped Czochralski silicon wafers
    Kvit, A
    Karoui, A
    Duscher, G
    Rozgonyi, GA
    APPLIED PHYSICS LETTERS, 2004, 84 (11) : 1889 - 1891
  • [37] Correlation of oxygen precipitation and void annihilation in nitrogen-doped Czochralski silicon
    Yu, XG
    Ma, XY
    Yang, DR
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2391 - 2394
  • [38] Oxygen precipitate denuded zone formation in Czochralski silicon wafer based on rapid thermal processing in nitrogen ambient
    Fu, Liming
    Yang, Deren
    Ma, Xiangyang
    Jiang, Hanqin
    Que, Duanlin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (12) : 1302 - 1306
  • [39] Extended defects in nitrogen-doped Czochralski silicon during diode process
    Xu, J
    Ma, XY
    Lu, JG
    Li, CL
    Yang, DR
    PHYSICA B-CONDENSED MATTER, 2004, 348 (1-4) : 226 - 230
  • [40] Effect of high temperature-pressure on nitrogen-doped Czochralski silicon
    Misiuk, A
    Surma, B
    Yang, D
    Shalimov, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (03) : 473 - 481
12345