Electrical and optical characterization of 4H-SiC diodes for particle detection

被引:0
|
作者
Schifano, Ramón [1 ,4 ]
Vinattieri, Anna [1 ]
Bruzzi, Mara [2 ]
Miglio, Stefania [2 ]
Lagomarsino, Stefano [2 ]
Sciortino, Silvio [2 ]
Nava, Filippo [3 ]
机构
[1] Department of Physics, University of Florence, Via Sansone 1, I-50019 Sesto Fiorentino, Italy
[2] Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy
[3] Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena, Italy
[4] Department of Physics and Measurements Technology (IFM), Linköping University, Sweden
来源
J Appl Phys | / 10卷
关键词
Compendex;
D O I
103539
中图分类号
学科分类号
摘要
Capacitance - Electronic properties - Excitons - Laser beams - Monochromators - Photodetectors - Photoluminescence - Photomultipliers - Silicon carbide
引用
下载
收藏
相关论文
共 50 条
  • [41] Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    Wang Shou-Guo
    Zhang Yan
    Zhang Yi-Men
    Zhang Yu-Ming
    CHINESE PHYSICS B, 2010, 19 (01)
  • [42] Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    王守国
    张岩
    张义门
    张玉明
    Chinese Physics B, 2010, 19 (01) : 456 - 460
  • [43] Characterization of Ti Schottky diodes on epi-regrown 4H-SiC
    Zhu, L
    Li, CH
    Chow, TP
    Bhat, IB
    Jones, KA
    Scozzie, C
    Agarwal, A
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) : 754 - 757
  • [44] Optical properties of 4H-SiC
    Ahuja, R
    da Silva, AF
    Persson, C
    Osorio-Guillén, JM
    Pepe, I
    Järrendahl, K
    Lindquist, OPA
    Edwards, NV
    Wahab, Q
    Johansson, B
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2099 - 2103
  • [45] Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
    Beltran, Ana M.
    Schamm-Chardon, Sylvie
    Mortet, Vincent
    Lefebvre, Matthieu
    Bedel-Pereira, Elena
    Cristiano, Fuccio
    Strenger, Christian
    Haeublein, Volker
    Bauer, Anton J.
    HETEROSIC & WASMPE 2011, 2012, 711 : 134 - +
  • [46] Physical and electrical characterization of WN Schottky contacts on 4H-SiC
    Noblanc, O.
    Arnodo, C.
    Cassette, S.
    Brylinski, C.
    Kakanakova-Georgieva, A.
    Marinova, Ts.
    Kassamakova, L.
    Kakanakov, R.
    Pecz, B.
    Sulyok, A.
    Radnoczi, G.
    Materials Science Forum, 1998, 264-268 (pt 2): : 817 - 820
  • [47] Electrical characterization of laser-irradiated 4H-SiC wafer
    Salama, I
    Quick, NR
    Kar, A
    Chung, G
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 73 - 78
  • [48] Electrical characterization of erbium-implanted 4H-SiC epilayers
    Reshanov, SA
    Klettke, O
    Pensl, G
    Choyke, WJ
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 459 - 462
  • [49] Physical and electrical characterization of WN Schottky contacts on 4H-SiC
    Noblanc, O
    Arnodo, C
    Cassette, S
    Brylinski, C
    Kakanakova-Georgieva, A
    Marinova, T
    Kassamakova, L
    Kakanakov, R
    Pecz, B
    Sulyok, A
    Radnoczi, G
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 817 - 820
  • [50] Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts
    Defives, D
    Noblanc, O
    Dua, C
    Brylinski, C
    Barthula, M
    Meyer, F
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 395 - 401