Stability of field emitter array in microwave tubes

被引：0
|
作者：
Feng, Jinjun [1 ]
机构：
[1] Vacuum Electronics National Laboratory, Beijing Vacuum Electronics Research Institute, Beijing 100016, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2005年 / 25卷 / SUPPL.期
关键词：
Electric discharges - Electric fields - Electron guns - Ion bombardment - Light emitting diodes - Operations research - Partial pressure - Stability - Vacuum technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Influence of various factors, including partial pressure of residual gases, high voltage discharge and ion bombardment around the electron gun, on operation stability and lifetime of the microwave tubes fabricated with field emitter array (FEA) was analyzed. Feasible ways, involving emitter materials, FEA structures, degassing and sealing of the tubes, were proposed to improve stability and lifetime of the FEA in the microwave tubes.
引用
收藏
页码：16 / 19
相关论文
共 50 条
  • [31] Micropattern gated diamond field emitter array
    Kang, WP
    Wisitsoraat, A
    Davidson, JL
    Howell, M
    Li, Q
    Xu, JF
    Kerns, DV
    IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1997, : 567 - 571
  • [32] Fabrication of a high-density emitter array for electrospray thrusters using field emitter array process
    Inoue, Naoki
    Nagao, Masayoshi
    Murakami, Katsuhisa
    Khumpuang, Sommawan
    Hara, Shiro
    Takao, Yoshinori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
  • [33] Emission stability of a diamond-like carbon coated metal-tip field emitter array
    Jung, JH
    Ju, BK
    Lee, YH
    Jang, J
    Oh, MH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 486 - 488
  • [34] Field emitter array image sensor with HARP target
    Egami, N
    Nanba, M
    Osada, K
    Takiguchi, Y
    Okazaki, S
    Yamagishi, T
    Tanioka, K
    Tanaka, M
    Itoh, S
    IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE, 2001, : 159 - 160
  • [35] Micropattern-gated diamond field emitter array
    Kang, W.P.
    Wisitsora-at, A.
    Davidson, J.L.
    Howell, M.
    Kerns, D.V.
    Li, Q.
    Xu, J.F.
    Kim, C.K.
    1998, (16):
  • [36] GaN field emitter array diode with integrated anode
    J Vac Sci Technol B, 2 (822):
  • [37] Fabrication of gated niobium nitride field emitter array
    Gotoh, Yasuhito
    Kashiwagi, Yu
    Nagao, Masayoshi
    Tsuji, Hiroshi
    Ishikawa, Junzo
    Shinku/Journal of the Vacuum Society of Japan, 2000, 43 (03) : 251 - 254
  • [38] Modelling of field emitter array characteristics in diode system
    Nikiforov, K. A.
    Sayfullin, M. F.
    2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015), 2015, 643
  • [39] GaN field emitter array diode with integrated anode
    Underwood, RD
    Keller, S
    Mishra, UK
    Kapolnek, D
    Keller, BP
    DenBaars, SP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 822 - 825
  • [40] Field emitter array development for high frequency applications
    Parker, RK
    Jensen, KL
    Abrams, RH
    IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1997, : 92 - 97
12345