Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer

被引：0
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作者：
Tokumitsu, Eisuke [1 ]
Fujii, Gen [2 ]
Ishiwara, Hiroshi [1 ,2 ]
机构：
[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] Frontier Collab. Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期
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页码：2125 / 2130
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