The Impact of Displacement Defect in Nanosheet Field Effect Transistor

被引：0
|
作者：
Kim, Jungsik [1 ,2 ]
机构：
[1] [1,Kim, Jungsik
来源：
Kim, Jungsik (jungsik@gnu.ac.kr) | 1600年 / Korean Institute of Electrical Engineers卷 / 16期
关键词：
Nanosheets;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：525 / 529
相关论文
共 50 条
  • [41] Study on displacement damage effect of highly charged ions in carbon nanotube field-effect transistor
    Yang, Xirong
    Zeng, Jian
    Liu, Jie
    Zhang, Shengxia
    Zhang, Hongda
    Gao, Shifan
    Zhai, Pengfei
    Cai, Li
    Hu, Peipei
    Liu, Li
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 552
  • [42] Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse
    Choi, Haeju
    Baek, Sungpyo
    Jung, Hanggyo
    Kang, Taeho
    Lee, Sangmin
    Jeon, Jongwook
    Jang, Byung Chul
    Lee, Sungjoo
    ADVANCED MATERIALS, 2024,
  • [43] THE FIELD EFFECT TRANSISTOR
    DACEY, GC
    ROSS, IM
    BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189
  • [44] Insights into radiation displacement defect in an insulated-gate bipolar transistor
    Kim, Kihyun
    Kim, Jungsik
    AIP ADVANCES, 2021, 11 (02)
  • [45] Impact of device-to-device interference in nanosheet field-effect transistors
    Lee, Khwang-Sun
    Shin, Woo Cheol
    Yeon, Ju-Won
    Park, Jun -Young
    MICROELECTRONICS RELIABILITY, 2023, 145
  • [46] Impact of Source Engineering in Split Drain Tunnel Field Effect Transistor
    Bhattacharya, Ayan
    Basak, Debadipta
    Reddy, S.
    Sarkar, Subir Kumar
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON), 2018, : 519 - 522
  • [47] Impact ionization by hot carriers in a black phosphorus field effect transistor
    Ahmed, Faisal
    Kim, Young Duck
    Yang, Zheng
    He, Pan
    Hwang, Euyheon
    Yang, Hyunsoo
    Hone, James
    Yoo, Won Jong
    NATURE COMMUNICATIONS, 2018, 9
  • [48] Impact ionization by hot carriers in a black phosphorus field effect transistor
    Faisal Ahmed
    Young Duck Kim
    Zheng Yang
    Pan He
    Euyheon Hwang
    Hyunsoo Yang
    James Hone
    Won Jong Yoo
    Nature Communications, 9
  • [49] Impact of gate leakage considerations in tunnel field effect transistor design
    Chaturvedi, Poornendu
    Kumar, M. Jagadesh
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (07)
  • [50] Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node
    Hong, Jungmin
    Park, Jaewoong
    Lee, Jeawon
    Ham, Jeonghun
    Park, Kiron
    Jeon, Jongwook
    MICROMACHINES, 2019, 10 (12)
12345