Observation of dislocation etch pits in GaN epilayers by atomic force microscopy and scanning electron microscopy

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作者：
Institute of Microelectronics, Xidian University, Xi'an 710071, China [1 ]
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Pan Tao Ti Hsueh Pao | 2007年 / 4卷 / 473-479期
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页码：473 / 479
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