Influence of the key structures and the main process parameters on the etching property of chamber of wet etching machine

被引:0
|
作者
State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, China [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
机构
来源
Rengong Jingti Xuebao | / 4卷 / 1056-1062期
关键词
Numerical analysis - Silica - Numerical models;
D O I
暂无
中图分类号
学科分类号
摘要
Taking the chamber of 18 inches wet etching machine as the research object, its numerical analysis model of coupled fluid and heat was established. The investigation on distribution law of process gas's flow rate, pressure and temperature in the chamber of wet etching machine during the etching process was developed. Based on the process principle of HF-acid etching SiO2 in ethanol environment, the evaluation method is put forward by the means of etching uniformity and etching speed, which were characterized by dissipation coefficient, material conversion factor, physical mass flux and the lattice structure common representation. The influence law of the key structure and main process parameters of the chamber on the etching rate and etching uniformity is obtained. ©, 2015, Chinese Ceramic Society. All right reserved.
引用
收藏
相关论文
共 50 条
  • [41] Optimized process of metal assisted silicon wet etching for antireflection layer
    Kim, Bo-soon
    Ju, Won-Ki
    Lee, Min-Woo
    Lee, Seung-Gol
    Beom-Hoan, O.
    MICROELECTRONIC ENGINEERING, 2012, 98 : 395 - 399
  • [42] The effect of various process induced damages on wet etching rate difference
    Yoon, Hyo-Geun
    Lee, Sang-Hyun
    Kim, Woo-Jin
    Choi, Geun-Min
    Song, Young-Wok
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII, 2008, 134 : 143 - 147
  • [43] Key Effects and Process Parameters Extraction on the CD of Reactive Ion Etching (RIE) Based on DOE Modeling
    Rizquez, Maria
    Roussy, Agnes
    Blue, Jakey
    Bucelle, Laurent
    Pinaton, Jacques
    Pasquet, Julien
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2017, 30 (04) : 539 - 546
  • [44] Influence of wet etching on the morphologies of Si patterned substrates and ZnO epilayers
    Cui Xiu-Zhi
    Zhang Tian-Chong
    Mei Zeng-Xia
    Liu Zhang-Long
    Liu Yao-Ping
    Guo Yang
    Su Xi-Yu
    Xue Qi-Kun
    Du Xiao-Long
    ACTA PHYSICA SINICA, 2009, 58 (01) : 309 - 314
  • [45] Numerical simulation of dual frequency etching reactors: Influence of the external process parameters on the plasma characteristics
    Georgieva, V.
    Bogaerts, A.
    Journal of Applied Physics, 2005, 98 (02):
  • [46] Numerical simulation of dual frequency etching reactors: Influence of the external process parameters on the plasma characteristics
    Georgieva, V
    Bogaerts, A
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
  • [47] Integration of benzocyclobutene polymers and silicon micromachined structures using anisotropic wet etching
    Ghalichechian, N
    Modafe, A
    Ghodssi, R
    Lazzeri, P
    Micheli, V
    Anderle, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2439 - 2447
  • [48] Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching
    Gao, Bo
    Chen, Tao
    Khuat, Vanthanh
    Si, Jinhai
    Hou, Xun
    CHINESE OPTICS LETTERS, 2016, 14 (02)
  • [49] Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching
    高博
    陈涛
    Vanthanh Khuat
    司金海
    侯洵
    Chinese Optics Letters, 2016, 14 (02) : 63 - 66
  • [50] Fabrication of amorphous carbon cantilever structures by isotropic and anisotropic wet etching methods
    Sheeja, D
    Tay, BK
    Yu, LJ
    Chua, DHC
    Milne, WI
    Miao, J
    Fu, YQ
    DIAMOND AND RELATED MATERIALS, 2003, 12 (09) : 1495 - 1499