Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

被引：0

作者：

Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna, Austria ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

不详 ^{[4
]}

机构：

来源：

J Appl Phys | 2012年 / 7卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] INFLUENCE OF OXIDE THICKNESS ON THE TRANSPORT-PROPERTIES OF SILICON METAL-OXIDE-SEMICONDUCTOR SYSTEMS
GOLD, A
APPLIED PHYSICS LETTERS, 1986, 48 (06) : 439 - 441
[42] OPTIMIZATION OF AMMONIA-SENSITIVE METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH PLATINUM GATES.
Spetz, A.
Armgarth, M.
Lundstrom, I.
1600, (11):
[43] METAL-OXIDE-SEMICONDUCTOR NO2 SENSOR
INOUE, T
OHTSUKA, K
YOSHIDA, Y
MATSUURA, Y
KAJIYAMA, Y
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 25 (1-3) : 388 - 391
[44] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
MAVOR, J
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1463 - &
[45] Electrically erasable metal-oxide-semiconductor dosimeters
Lipovetzky, Jose
Redin, Eduardo Gabriel
Faigon, Adrian
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) : 1244 - 1250
[46] Electrowetting at a liquid metal-oxide-semiconductor junction
Arscott, Steve
APPLIED PHYSICS LETTERS, 2013, 103 (14)
[47] POSITRON STUDIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
AU, HL
ASOKAKUMAR, P
NIELSEN, B
LYNN, KG
JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2972 - 2976
[48] InAs nanowire metal-oxide-semiconductor capacitors
Roddaro, Stefano
Nilsson, Kristian
Astromskas, Gvidas
Samuelson, Lars
Wernersson, Lars-Erik
Karlstrom, Olov
Wacker, Andreas
APPLIED PHYSICS LETTERS, 2008, 92 (25)
[49] SURFACE SUPERCONDUCTIVITY AND THE METAL-OXIDE-SEMICONDUCTOR SYSTEM
HANKE, W
KELLY, MJ
PHYSICAL REVIEW LETTERS, 1980, 45 (14) : 1203 - 1206
[50] EFFECTS OF STRESS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES
FONASH, SJ
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4607 - 4615

← 1 2 3 4 5 →