Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

被引：0
|
作者：
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna, Austria [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
来源：
J Appl Phys | 2012年 / 7卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Yang, Ji-Woon
    Park, Chang Seo
    Smith, Casey E.
    Adhikari, Hemant
    Huang, Jeff
    Heh, Dawei
    Majhi, Prashant
    Jammy, Raj
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [32] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    SAH, CT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +
  • [33] NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
    BOZIC, SM
    ELECTRONIC ENGINEERING, 1966, 38 (455): : 40 - &
  • [34] METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOS)
    CARNAUR, IS
    DRAGHICI, I
    STUDII SI CERCETARI DE FIZICA, 1972, 24 (06): : 741 - &
  • [35] SCANNING ELECTRON-MICROSCOPE STUDIES OF INTERFACE STATE GENERATION AND HOLE TRAPPING IN METAL-OXIDE-SEMICONDUCTOR SYSTEMS
    BOTTOMS, WR
    JOURNAL OF ELECTRON MICROSCOPY, 1977, 26 (02): : 180 - 180
  • [36] Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal-oxide-semiconductor devices
    Salace, G
    Petit, C
    Vuillaume, D
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 5896 - 5901
  • [37] APPLICATION OF DEEP LEVEL TRANSIENT SPECTROSCOPY TO METAL-OXIDE-SEMICONDUCTOR RELAXATION TRANSIENTS
    PEARCE, NO
    HAMILTON, B
    PEAKER, AR
    CRAVEN, RA
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 576 - 581
  • [38] DIRECT OBSERVATION OF MOS TRANSISTOR CHANNEL PINCH-OFF BY SCANNING ELECTRON MICROSCOPY - (METAL-OXIDE-SEMICONDUCTOR TRANSISTORS - E)
    SULWAY, DV
    HUGHES, KA
    EVANS, WA
    THORNTON, PR
    APPLIED PHYSICS LETTERS, 1966, 8 (11) : 296 - &
  • [39] Study on poly depletion in sub-0.1 μm metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy
    Wang, YG
    Edwards, H
    Ukraintsev, V
    Wu, J
    Chen, J
    Waller, J
    Woodall, D
    Scott, DB
    Machala, C
    Ekbote, S
    Tsao, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 381 - 384
  • [40] Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors
    Hsieh, LZ
    Ko, HH
    Kuei, PY
    Chang, LB
    Jeng, MJ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
12345