Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

被引：0

作者：

Liu, Chuan-Hsi ^{[1
]}

Lee, Ming T. ^{[1
]}

Lin, Chih-Yung ^{[1
]}

Chen, Jenkon ^{[1
]}

Loh, Y.T. ^{[1
]}

Liou, Fu-Tai ^{[1
]}

Schruefer, Klaus ^{[2
]}

Katsetos, Anastasios A. ^{[3
]}

Yang, Zhijian ^{[3
]}

Rovedo, Nivo ^{[3
]}

Hook, Terence B. ^{[3
]}

Wann, Clement ^{[3
]}

Chen, Tze-Chiang ^{[3
]}

机构：

[1] Liu, Chuan-Hsi

[2] Lee, Ming T.

[3] Lin, Chih-Yung

[4] Chen, Jenkon

[5] Loh, Y.T.

[6] Liou, Fu-Tai

[7] Schruefer, Klaus

[8] Katsetos, Anastasios A.

[9] Yang, Zhijian

[10] Rovedo, Nivo

[11] Hook, Terence B.

[12] Wann, Clement

[13] Chen, Tze-Chiang

来源：

Liu, C.-H. | 1600年 / Japan Society of Applied Physics卷 / 41期

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摘要：

引用

页码：2423 / 2425

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