Acceptor-like Trap Effect on Negative-Bias Temperature Instability (NBTI) of SiGe pMOSFETs on SRB

被引：0

作者：

Jiao, Guangfan ^{[1
]}

Totedano-Luque, Maria ^{[1
]}

Nam, Kab-Jin ^{[1
]}

Toshiro, Nakanishi ^{[1
]}

Lee, Seung-Hun ^{[1
]}

Kim, Jin-Soak ^{[1
]}

Kauerauf, Thomas ^{[1
]}

Chung, EunAe ^{[1
]}

Bae, Dong-il ^{[1
]}

Bae, Geumjong ^{[1
]}

Kim, Dong-Won ^{[1
]}

Hwang, Kihyun ^{[1
]}

机构：

[1] Samsung Elect, Semicond R&D Ctr, Hwasung City, Gyeonggi Do, South Korea

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the oxide electric field (E-ox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (Er) lowers the Ear and reduces the NBTI degradation at fixed overdrive. We demonstrate that trap engineering can be exploited to meet aggressive reliability requirements. Furthermore, it is predicted that there are no reliability issues in the SiGe pMOSFETs comparing with the Si counterparts.

引用

页数：4

共 50 条

[1] Negative bias temperature instability characteristics of strained SiGe pMOSFETs
Lee, C. H.
Wu, S. L.
Chen, S. H.
Kuo, C. W.
Lin, Y. M.
Chen, J. E.
Chang, S. J.
ELECTRONICS LETTERS, 2007, 43 (15) : 835 - 837
[2] Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability
Boo, A. A.
Ang, D. S.
Teo, Z. Q.
Leong, K. C.
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 486 - 488
[3] High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices
Nguyen, D. D.
Kambour, K. E.
Kouhestani, C.
Hjalmarson, H. P.
Devine, R. A. B.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 9 - 16
[4] Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices
Hjalmarson, H. P.
Nguyen, D. D.
Kambour, K. E.
Kouhestani, C.
Devine, R. A. B.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 49 - 54
[5] Negative-Bias Temperature Instability of GaN MOSFETs
Guo, Alex
del Alamo, Jesus A.
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
[6] Physical mechanisms of negative-bias temperature instability
Tsetseris, L
Zhou, XJ
Fleetwood, DM
Schrimpf, RD
Pantelides, ST
APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
[7] Negative bias temperature instability (NBTI) in deep sub-micron p+-gate pMOSFETs
Chen, YF
Lin, MH
Chou, CH
Chang, WC
Huang, SC
Chang, YJ
Fu, KY
Lee, MT
Liu, CH
Fan, SE
2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 98 - 101
[8] Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe pMOSFETs
Duan, Guo Xing
Hachtel, Jordan A.
Zhang, En Xia
Zhang, Cher Xuan
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Mitard, Jerome
Linten, Dimitri
Witters, Liesbeth
Collaert, Nadine
Mocuta, Anda
Thean, Aaron Voon-Yew
Chisholm, Matthew F.
Pantelides, Sokrates T.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (04) : 541 - 548
[9] The role of hydrogen migration in negative-bias temperature instability
Ushio, J
Watanabe, K
Kushida-Abdelghafar, K
Maruizumi, T
APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 258 - 263
[10] Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs
Duan, Guo Xing
Hatchtel, Jordan
Shen, Xiao
Zhang, En Xia
Zhang, Cher Xuan
Tuttle, Blair R.
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Franco, Jacopo
Linten, Dimitri
Mitard, Jerome
Witters, Liesbeth
Collaert, Nadine
Chisholm, Matthew F.
Pantelides, Sokrates T.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (03) : 352 - 358

← 1 2 3 4 5 →