共 50 条
- [43] Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors Journal of Electronic Materials, 1998, 27 : 542 - 545
- [46] Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer Journal of Electronic Materials, 2009, 38 : 1618 - 1623
- [48] Molecular beam epitaxy growth of CdTe on (211)A GaAs JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (06): : 3220 - 3223
- [49] Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1701 - 1705
- [50] Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth Journal of Electronic Materials, 2019, 48 : 6124 - 6137