共 50 条
- [21] Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates Journal of Electronic Materials, 2012, 41 : 2719 - 2724
- [25] Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers Wijewarnasuriya, P.S., 1600, Minerals, Metals & Materials Soc (TMS), Warrendale, PA, United States (24):
- [29] STUDY OF CDTE EPITAXIAL-GROWTH ON (211)B GAAS BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1399 - 1404
- [30] Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211) B JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (04):