Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)

被引:0
|
作者
Gu, C.Z.
Jiang, X.
Kappius, L.
Mantl, S.
机构
[1] Fraunhofer-Inst. Schicht- und O., Bienroder Weg 54E, 38108 Braunschweig, Germany
[2] Inst. fur Schicht- und Lonentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
[3] Natl. Lab. of Superhard Materials, Jilin University, Changchun 130023, China
来源
| 1743年 / American Institute of Physics Inc.卷 / 87期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] FRUSTRATED DIMERS AT THE COSI2/SI(001) INTERFACE
    COPEL, M
    FALTA, J
    PHYSICAL REVIEW B, 1993, 48 (04): : 2783 - 2786
  • [23] RESISTANCE AND STRUCTURAL STABILITIES OF EPITAXIAL COSI2 FILMS ON (001) SI SUBSTRATES
    HSIA, SL
    TAN, TY
    SMITH, P
    MCGUIRE, GE
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 1864 - 1873
  • [24] Reactive deposition epitaxy of CoSi2 nanostructures on Si(001):: Nucleation and growth and evolution of dots during anneal
    Goldfarb, I
    Briggs, GAD
    PHYSICAL REVIEW B, 1999, 60 (07): : 4800 - 4809
  • [25] Kinetics during endotaxial growth of CoSi2 nanowires and islands on Si(001)
    Ong, Bin Leong
    Tok, Eng Soon
    APPLIED SURFACE SCIENCE, 2019, 466 : 583 - 591
  • [26] THICKNESS DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    PLANO, MA
    ZHAO, S
    GARDINIER, CF
    LANDSTRASS, MI
    KANIA, DR
    KAGAN, H
    GAN, KK
    KASS, R
    PAN, LS
    HAN, S
    SCHNETZER, S
    STONE, R
    APPLIED PHYSICS LETTERS, 1994, 64 (02) : 193 - 195
  • [27] Enhanced growth of CoSi2 thin films on (001)Si with Co/Au/Co sandwich structures
    Cheng, S. L.
    Chen, H. Y.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 441 - 445
  • [28] MICROSTRUCTURAL STABILITY OF EPITAXIAL COSI2/SI (001) INTERFACES
    RAJAN, K
    HSIUNG, LM
    JIMENEZ, JR
    SCHOWALTER, LJ
    RAMANATHAN, KV
    THOMPSON, RD
    IYER, SS
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4853 - 4856
  • [29] Nitride-mediated epitaxy of CoSi2 on Si(001)
    Chong, RKK
    Yeadon, M
    Choi, WK
    Stach, EA
    Boothroyd, CB
    APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1833 - 1835
  • [30] EPITAXIAL COSI2 FORMATION ON (001)SI BY REACTIVE DEPOSITION
    READER, AH
    DUCHATEAU, JPWB
    CROMBEEN, JE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1204 - 1207