Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

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[1] Awan, I.T.
[2] Galeti, H.V.A.
[3] Galvão Gobato, Y.
[4] Brasil, M.J.S.P.
[5] Taylor, D.
[6] Henini, M.
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| 1600年 / American Institute of Physics Inc.卷 / 116期
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