Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 μm contact pattern in 193 nm lithography

被引：0
|
作者：
Lin, Cheng-Ming [1 ,2 ]
Loong, Wen-An [1 ]
机构：
[1] E-Beam Operation Division, Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Hsin-Chu 300, Taiwan
[2] Institute of Applied Chemistry, National Chiao Tung University, Hsin-Chu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期
关键词：
Chemical stability;
D O I：
10.1143/jjap.41.4037
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4037 / 4041
相关论文
共 50 条
  • [31] New systematic evaluation method for attenuated phase-shifting mask specifications
    Kagami, I
    Sugawara, M
    Kawahira, H
    Tsudaka, K
    Ishikawa, K
    Nozawa, S
    Shimizu, H
    Ogawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6590 - 6597
  • [32] Phase-shifting mask polarimetry: monitoring polarization at 193-nm high numerical aperture and immersion lithography with phase shifting masks
    McIntyre, GR
    Neureuther, AR
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2005, 4 (03):
  • [33] Simulation study of 193-nm phase-shifting masks: Analysis of distributed defects of embeded attenuated phase mask (EAPSM)
    Karklin, L
    18TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2002, 4764 : 240 - 243
  • [34] Feasibility study of an embedded transparent phase-shifting mask in ArF lithography
    Matsuo, T
    Ogawa, T
    Morimoto, H
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 443 - 451
  • [35] Fabrication and characterization of aluminum oxide/chromium oxide superlattice for attenuated phase-shifting mask working at 193 nm wavelength
    Lai, FD
    Wang, LA
    THIN SOLID FILMS, 2002, 409 (02) : 220 - 226
  • [36] Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F2 lithography
    Chen, HL
    Wu, HS
    Lee, CC
    Ko, FH
    Fan, W
    Hsieh, CI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 3057 - 3061
  • [37] Ta-Si-O absorptive shifter for the attenuated phase-shifting mask
    Yan, YS
    Cheng, CC
    Lin, CL
    Gan, JY
    Wu, TB
    Tuo, LC
    Wang, JJ
    PHOTOMASK AND X-RAY MASK TECHNOLOGY III, 1996, 2793 : 155 - 164
  • [38] Optimization of stepper parameters and its design rule for attenuated phase-shifting mask
    Kim, HE
    Barnett, S
    Shih, J
    OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 532 - 542
  • [39] AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking
    Loong, WA
    Lin, CM
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 133 - 136
  • [40] Challenge to sub-0.1μm pattern fabrication using an alternating phase-shifting mask in ArF lithography
    Matsuo, T
    Nakazawa, K
    Ogawa, T
    OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 : 302 - 309
12345