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- [1] Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 μm contact pattern in 193 nm lithography JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B): : 4037 - 4041
- [2] Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 μm contact hole pattern in 193 nm lithography MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 138 - 139
- [3] AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12B): : 6801 - 6806
- [5] An attenuated phase-shifting mask in ArF lithography PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 : 324 - 331
- [6] TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm Microelectron Eng, 1 (93-96):
- [8] Materials for an attenuated phase-shifting mask in 157 nm lithography 20TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, 2000, 4186 : 268 - 274
- [9] Evaluation of high-transmittance attenuated phase shifting mask for 157 nm lithography JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B): : 4042 - 4045
- [10] Simulation of transmittance on the effect of resolution enhancement of 100 mn pattern with attenuated phase-shifting mask in 193 nm lithography PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 437 - 443