A novel parallel approach for quantum effect simulation in semiconductor devices

被引：0
|
作者：
Li, Yiming [1 ,2 ]
Chao, Tien-Sheng [1 ,3 ]
Sze, Simon M. [1 ,4 ]
机构：
[1] National Nano Device Laboratories, Hsinchu 300, Taiwan
[2] Microelectron./Info. Syst. Res. Ctr., National Chiao Tung University, Hsinchu 300, Taiwan
[3] Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan
[4] Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
来源：
International Journal of Modelling and Simulation | 2003年 / 23卷 / 02期
关键词：
Quantum confinement effects;
D O I：
10.1080/02286203.2003.11442259
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：94 / 102
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