HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition

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[1] [1,Yin, Chaoyi

[2] 1,2,Zhu, Meiping

[3] 1,Zeng, Tingting

[4] Song, Chen

[5] Chai, Yingjie

[6] 1,Shao, Yuchuan

[7] Zhang, Rongjun

[8] Zhao, Jiaoling

[9] Li, Dawei

[10] 1,2,3,Shao, Jianda

来源：

Zhu, Meiping (bree@siom.ac.cn); Shao, Jianda (jdshao@siom.ac.cn) | 1600年 / Elsevier Ltd卷 / 859期

关键词：

The laser-induced damage threshold (LIDT) of HfO2/SiO2 anti-reflection (AR) films for ultraviolet (UV) lasers was improved via low-temperature plasma-enhanced atomic layer deposition (PEALD). Focused on the chemical composition; optical absorption; surface scattering; and laser-resistance; the impact of precursor exposure time on PEALD SiO2 film properties and growth temperature on PEALD SiO2 and HfO2 film properties were investigated respectively. When irradiated by UV laser; PEALD SiO2 film exhibits a higher LIDT than the PEALD HfO2 film; which is consistent with their less impurity content and lower absorption. A bilayer structure HfO2/SiO2 AR film for 355 nm laser was designed and experimentally demonstrated via PEALD growth at a temperature of 150 °C. The prepared PEALD AR film shows a reflectance 2 (355 nm; 7.8 ns) than the conventional e-beam deposition method. © 2020 Elsevier B.V;

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