Epitaxial growth of 6H-SiC thin films on α-Al2O3 substrates by SSMBE

被引：0
|
作者：
Kang, Chao-Yang [1 ]
Liu, Zhong-Liang [1 ,2 ]
Tang, Jun [1 ]
Chen, Xiang-Cun [1 ]
Xu, Peng-Shou [1 ]
Pan, Guo-Qiang [1 ]
机构：
[1] National Synchrotron Radiation Laboratory, University Science and Technology of China, Hefei 230029, China
[2] Institute of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / 02期
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页码：308 / 312
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