Growth defects in GaN films on 6H-SiC substrates

被引：68
|
作者：
Chien, FR [1 ]
Ning, XJ [1 ]
Stemmer, S [1 ]
Pirouz, P [1 ]
Bremser, MD [1 ]
Davis, RF [1 ]
机构：
[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 19期
关键词：
D O I：
10.1063/1.116279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lattice defects in GaN epilayers grown on 6H-SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3[11(2) over bar 0], [0001], and 1/3[11(2) over bar 3]. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). (C) 1996 American Institute of Physics.
引用
收藏
页码：2678 / 2680
页数：3
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