Growth defects in GaN films on 6H-SiC substrates

被引：68

作者：

Chien, FR ^{[1
]}

Ning, XJ ^{[1
]}

Stemmer, S ^{[1
]}

Pirouz, P ^{[1
]}

Bremser, MD ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 19期

关键词：

D O I：

10.1063/1.116279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice defects in GaN epilayers grown on 6H-SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3[11(2) over bar 0], [0001], and 1/3[11(2) over bar 3]. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). (C) 1996 American Institute of Physics.

引用

页码：2678 / 2680

页数：3

共 50 条

[41] GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation
Limb, J. B.
Yoo, D.
Zhang, Y.
Ryou, J. H.
Shen, S. C.
Dupuis, R. D.
ELECTRONICS LETTERS, 2008, 44 (04) : 313 - 315
[42] GaN layers grown by HVPE on P-type 6H-SiC substrates
Ioffe Physical-Technical Institute
MRS Internet J. Nitride Semicond. Res., (7d):
[43] Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates
Vermaut, P
Ruterana, P
Nouet, G
Salvador, A
Botchkarev, A
Sverdlov, B
Morkoc, H
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 289 - 292
[44] Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates
Gaska, R
Yang, JW
Osinsky, A
Chen, Q
Khan, MA
Orlov, AO
Snider, GL
Shur, MS
APPLIED PHYSICS LETTERS, 1998, 72 (06) : 707 - 709
[45] Crystallographic Orientation and Strain in GaN Crystals Grown on 6H-SiC and Sapphire Substrates
Shao, Yongliang
Hu, Haixiao
Zhang, Baoguo
Hao, Xiaopeng
Wu, Yongzhong
CRYSTALS, 2023, 13 (12)
[46] GaN layers grown by HVPE on p-type 6H-SiC substrates
Nikolaev, AE
Melnik, YV
Blashenkov, MN
Kuznetsov, NI
Nikitina, IP
Zubrilov, AS
Tsvetkov, DV
Nikolaev, VI
Dmitriev, VA
Soloviev, VA
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U346 - U352
[47] Growth and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN on 6H-SiC(0001) substrates
Hanser, AD
Nam, OH
Thomson, DB
Gehrke, T
Bremser, MD
Zheleva, TS
Davis, RF
LATTICE MISMATCHED THIN FILMS, 1999, : 193 - 198
[48] Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
Davis, RF
Gehrke, T
Linthicum, KJ
Rajagopal, P
Roskowski, AM
Zheleva, T
Preble, EA
Zorman, CA
Mehregany, M
Schwarz, U
Schuck, J
Grober, R
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2001, 6 (14): : 1 - 16
[49] Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
Davis, Robert F.
Gehrke, T.
Linthicum, K.J.
Rajagopal, P.
Roskowski, A.M.
Zheleva, T.
Preble, Edward A.
Zorman, C.A.
Mehregany, M.
Schwarz, U.
Schuck, J.
Grober, R.
MRS Internet Journal of Nitride Semiconductor Research, 2001, 6
[50] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF 6H-SIC THIN-FILMS ON OFF-AXIS 6H-SIC SUBSTRATES
KONG, HS
GLASS, JT
DAVIS, RF
JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2672 - 2679

← 1 2 3 4 5 →