Epitaxial growth and characterization of 6H-SiC films on Si (111) substrates by LPCVD

被引：0
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作者：
Zheng, Hai-Wu [1 ,2 ]
Su, Jian-Feng [2 ]
Wang, Ke-Fan [1 ]
Li, Yin-Li [1 ]
Gu, Yu-Zong [1 ]
Fu, Zhu-Xi [2 ]
机构：
[1] Institute for Physics of Microsystem, School of Physics and Electronics, Henan University, Kaifeng 475004, China
[2] Department of Physics, University of Science and Technology of China, Hefei 230026, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2007年 / 38卷 / 08期
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页码：1336 / 1338
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