High-speed and high-output uni-traveling-carrier photodiodes

被引：0

作者：

Ito, H. ^{[1
]}

Furuta, T. ^{[1
]}

Ishibashi, T. ^{[1
]}

机构：

[1] NTT Photonics Laboratories, Atsugi-shi, 243-0198, Japan

来源：

| 2001年 / Institute of Electronics, Information and Communication, Engineers, IEICE卷 / E84-C期

关键词：

Bandwidth - Dielectric relaxation - Electron devices - Electron mobility - Integrated optoelectronics - Signal processing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper describes the recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD). The UTC-PD utilizes only electrons as the active carriers and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth (f3dB) of 310 GHz, a high output current over 180 mA with an f3dBof 65 GHz, a high linearity of up to 80 mA, and a zero-bias operation with an f3dBof 230 GHz and an output peak current of 6.8 mA.

引用

共 50 条

[41] Modeling of high speed uni-traveling carrier photodiodes
Xiao, Y. G.
Li, Z. Q.
Li, Z. M. Simon
OPTOELECTRONIC DEVICES AND INTEGRATION X, 2021, 11894
[42] InP/InGaAs uni-traveling-carrier photodiodes
Ishibashi, T
Furuta, T
Fushimi, H
Kodama, S
Ito, H
Nagatsuma, T
Shimizu, N
Miyamoto, Y
IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (06): : 938 - 949
[43] Fabrication and characterization of novel high-speed In GaAs/InP uni-traveling-carrier photodetector for high responsivity
陈庆涛
黄永清
费嘉瑞
段晓峰
刘凯
刘锋
康超
汪君楚
房文敬
任晓敏
Chinese Physics B, 2015, (10) : 616 - 620
[44] Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
Chen Qing-Tao
Huang Yong-Qing
Fei Jia-Rui
Duan Xiao-Feng
Liu Kai
Liu Feng
Kang Chao
Wang Jun-Chu
Fang Wen-Jing
Ren Xiao-Min
CHINESE PHYSICS B, 2015, 24 (10)
[45] Uni-traveling-carrier photodiodes with increased output response and low intermodulation distortion
Klamkin, Jonathan
Ramaswarny, Anand
Chang, Yu-Chia
Johansson, Leif A.
Dummer, Matthew M.
Bowers, John E.
DenBaars, Steven P.
Coldren, Larry A.
2007 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS, 2007, : 14 - +
[46] Improved response of uni-traveling-carrier photodiodes by carrier injection
Shimizu, N
Watanabe, N
Furuta, T
Ishibashi, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1424 - 1426
[47] High-Speed Characteristics of Uni-Traveling-Carrier Photodiode Under Bias-Free Operation
Lu, Tao
Huang, Yongqing
Liu, Kai
Duan, Xiaofeng
Cai, Shiwei
Ren, Xiaomin
Li, Weigang
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (19) : 1553 - 1556
[48] Recent development on uni-traveling-carrier photodiodes and their applications
Ito, H
Nagatsuma, T
Ishibashi, T
LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 386 - 387
[49] High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links
Chtioui, M.
Enard, A.
Carpentier, D.
Bernard, S.
Rousseau, B.
Lelarge, E.
Porrimereau, F.
Achouche, M.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (1-4) : 202 - 204
[50] Design and fabrication of uni-traveling-carrier InGaAs photodiodes
Yang, H.
Daunt, C. L. L. M.
Gity, F.
Lee, K.
Han, W.
Thomas, K.
Corbett, B.
Peters, F. H.
OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847

← 1 2 3 4 5 →