High-speed and high-output uni-traveling-carrier photodiodes

被引：0

作者：

Ito, H. ^{[1
]}

Furuta, T. ^{[1
]}

Ishibashi, T. ^{[1
]}

机构：

[1] NTT Photonics Laboratories, Atsugi-shi, 243-0198, Japan

来源：

| 2001年 / Institute of Electronics, Information and Communication, Engineers, IEICE卷 / E84-C期

关键词：

Bandwidth - Dielectric relaxation - Electron devices - Electron mobility - Integrated optoelectronics - Signal processing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper describes the recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD). The UTC-PD utilizes only electrons as the active carriers and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth (f3dB) of 310 GHz, a high output current over 180 mA with an f3dBof 65 GHz, a high linearity of up to 80 mA, and a zero-bias operation with an f3dBof 230 GHz and an output peak current of 6.8 mA.

引用

共 50 条

[21] Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis
石拓
熊兵
孙长征
罗毅
Chinese Optics Letters, 2011, 9 (08) : 83 - 86
[22] Thick Absorption Layer Uni-Traveling-Carrier Photodiodes With High Responsivity, High Speed, and High Saturation Power
Chtioui, Mourad
Carpentier, Daniele
Bernard, Stephan
Rousseau, Benjamin
Lelarge, Francois
Pommereau, Frederic
Jany, Christophe
Enard, Alain
Achouche, Mohand
IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (07) : 429 - 431
[23] High-Speed Uni-Traveling-Carrier Photodetector with the New Design of Absorber and Collector
Chen, Qingtao
Huang, Yongqing
Duan, Xiaofeng
Liu, Feng
Kang, Chao
Wang, Qi
Wang, Jun
Zhang, Xia
Ren, Xiaomin
2015 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC), 2015,
[24] Low-Bias High-Speed Modified Uni-Traveling-Carrier Photodiode
Wu, Jie
Huang, Yongqing
Fei, Jiarui
Liu, Tao
Duan, Xiaofeng
Liu, Kai
Ren, Xiaomin
2017 16TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS & NETWORKS (ICOCN 2017), 2017,
[25] Effect of temperature on bandwidth and responsivity of uni-traveling-carrier and modified uni-traveling-carrier photodiodes
Jun, Dong-Hwan
Jang, Jae-Hyung
Song, Jong-In
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2360 - 2363
[26] InP/InGaAs uni-traveling-carrier photodiodes
Ishibashi, Tadao
Furuta, Tomofumi
Fushimi, Hiroshi
Kodama, Satoshi
Ito, Hiroshi
Nagatsuma, Tadao
Shimizu, Naofumi
Miyamoto, Yutaka
IEICE Transactions on Electronics, 2000, (06) : 938 - 949
[27] High-speed uni-traveling-carrier photodiodes monolithically integrated with InP heterojunction bipolar transistors using Be ion implantation
Kashio, Norihide
Yamahata, Shoji
Ida, Minoru
Kurishima, Kenji
Sano, Kimikazu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7605 - 7610
[28] High-speed uni-traveling-carrier photodiodes monolithically integrated with InP heterojunction bipolar transistors using be ion implantation
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 10 A (7605-7610):
[29] CHARACTERIZATION OF HIGH-PHOTOCURRENT AND HIGH-SPEED INP-BASED UNI-TRAVELING-CARRIER PHOTODIODES AT 1.55-μm WAVELENGTH
Meng, Qianqian
Wang, Hong
Liu, Chongyang
Gao, Jianjun
Tian, Yang
Ang, Kian Siong
Guo, Xin
Gao, Bo
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 58 (09) : 2156 - 2162
[30] High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over 150 GHz
Shimizu, N
Watanabe, N
Furuta, T
Ishibashi, T
55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 164 - 165

← 1 2 3 4 5 →