Growth and characterisation of InAsSb ternary layers on (100) GaSb substrates by LP-MOCVD

被引：0
|
作者：
Li, Xiaoting [1 ,2 ]
Wang, Tao [1 ]
Wang, Jingwei [1 ]
Wang, Yiding [3 ]
Yin, Jingzhi [3 ]
Sai, Xiaofeng [1 ]
Gao, Hongkai [1 ]
Zhang, Zhiyong [4 ]
机构：
[1] Xi'an Institute of Optics and Precision Mechanism, Chinese Academy of Sciences, Xi'an 710068, China
[2] Chang'an University, Xi'an 710061, China
[3] Department of Electronics and Engineering, Jilin University, Changchun 130023, China
[4] Northwest University, Xi'an 710069, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 12期
关键词：
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D O I：
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摘要：
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页码：2298 / 2302
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