Growth and characterisation of InAsSb ternary layers on (100) GaSb substrates by LP-MOCVD

被引：0
|
作者：
Li, Xiaoting [1 ,2 ]
Wang, Tao [1 ]
Wang, Jingwei [1 ]
Wang, Yiding [3 ]
Yin, Jingzhi [3 ]
Sai, Xiaofeng [1 ]
Gao, Hongkai [1 ]
Zhang, Zhiyong [4 ]
机构：
[1] Xi'an Institute of Optics and Precision Mechanism, Chinese Academy of Sciences, Xi'an 710068, China
[2] Chang'an University, Xi'an 710061, China
[3] Department of Electronics and Engineering, Jilin University, Changchun 130023, China
[4] Northwest University, Xi'an 710069, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 12期
关键词：
15;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2298 / 2302
相关论文
共 50 条
  • [21] GaSb衬底上外延InAsxSb1-x材料的LP-MOCVD研究
    李晓婷
    王一丁
    汪韬
    殷景致
    王警卫
    赛小锋
    高鸿楷
    张志勇
    光子学报, 2005, (09) : 1363 - 1366
  • [22] GROWTH AND CHARACTERIZATION OF ALXGA1-XAS BRAGG REFLECTORS BY LP-MOCVD
    VERNON, SM
    TOBIN, SP
    SANFACON, MM
    MASTROVITO, AL
    KARAM, NH
    ALJASSIM, MM
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (03) : 335 - 340
  • [23] Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD
    Lin, T
    Jiang, L
    Wei, X
    Wang, GH
    Zhang, GZ
    Ma, XY
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 490 - 495
  • [24] Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD
    Tanaka, Y
    Hasebe, Y
    Inushima, T
    Sandhu, A
    Ohoya, S
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 410 - 414
  • [25] TEMPERATURE-DEPENDENT FACET DEVELOPMENT OF LP-MOCVD INGAP GROWN ON PATTERNED GAAS SUBSTRATES
    BONGERS, MMG
    BASTOS, PL
    GILING, LJ
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 981 - 982
  • [26] Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD
    Viswanath, AK
    Lee, JI
    Lee, CR
    Leem, JY
    Kim, D
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (05): : 551 - 556
  • [27] Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD
    A.K. Viswanath
    J.I. Lee
    C.R. Lee
    J.Y. Leem
    D. Kim
    Applied Physics A, 1998, 67 : 551 - 556
  • [28] Growth of ZnO thin films on silicon substrate with sputtering buffer layer by LP-MOCVD
    Yao, Ran
    Zhu, Jun-Jie
    Duan, Li
    Zhu, La-La
    Fu, Zhu-Xi
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2006, 35 (01): : 135 - 138
  • [29] LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide:: application to HEMT devices
    Poisson, MAD
    Magis, M
    Tordjman, M
    Aubry, R
    Sarazin, N
    Peschang, M
    Morvan, E
    Delage, SL
    di Persio, J
    Quéré, R
    Grimbert, B
    Hoel, V
    Delos, E
    Ducatteau, D
    Gaquiere, C
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 305 - 311
  • [30] LP-MOCVD growth of zinc-blende BxAl1-xAs alloys
    Li, Jia-Jian
    Wang, Qi
    Zhang, Xia
    Yang, Yue
    Ren, Xiao-Min
    Huang, Yong-Qing
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2010, 21 (08): : 1193 - 1195
12345