Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

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[1] Fan, W.J.
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Fan, W.J. (ewjfan@ntu.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 113期
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A ten-band k·p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves; optical transition matrix elements; internal piezoelectric field; and optical gain of InGaAsN/GaAs on the (110); (111); (113); and (11∞)-oriented substrates are investigated including band-anti-crossing; strain; and piezoelectric field effects. The band structures and optical gain are sensitive to the substrate orientation. The fundamental transition energy is the largest for the (111)-oriented QW and the smallest for (11∞)-oriented QW. The absolute values of internal piezoelectric field in the well and barrier layers reach the maximum for the (111)-QW; and zero for the (110) and (11∞)-oriented QWs. There exists an injection current density turning point. When the injection current density is below the turning point; the (111)-oriented QW has the largest peak gain. At the larger injection current density; the (11∞)-oriented QW has the largest peak gain. © 2013 American Institute of Physics;
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