Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

被引：0
|
作者：
机构：
[1] Fan, W.J.
来源：
Fan, W.J. (ewjfan@ntu.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
A ten-band k·p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves; optical transition matrix elements; internal piezoelectric field; and optical gain of InGaAsN/GaAs on the (110); (111); (113); and (11∞)-oriented substrates are investigated including band-anti-crossing; strain; and piezoelectric field effects. The band structures and optical gain are sensitive to the substrate orientation. The fundamental transition energy is the largest for the (111)-oriented QW and the smallest for (11∞)-oriented QW. The absolute values of internal piezoelectric field in the well and barrier layers reach the maximum for the (111)-QW; and zero for the (110) and (11∞)-oriented QWs. There exists an injection current density turning point. When the injection current density is below the turning point; the (111)-oriented QW has the largest peak gain. At the larger injection current density; the (11∞)-oriented QW has the largest peak gain. © 2013 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells
    Perez-Oviedo, T. A.
    Bustos-Ibarra, M. I.
    Vera-Gallegos, P. A.
    Belio-Manzano, A.
    Olvera-Enriquez, J. P.
    Briones, E.
    Lopez-Luna, E.
    Mendez-Garcia, V. H.
    Espinosa-Vega, L. I.
    Cortes-Mestizo, I. E.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (27)
  • [22] Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells
    Takeuchi, Hideo
    Asai, Souta
    Tsuruta, Syuichi
    Nakayama, Masaaki
    APPLIED PHYSICS LETTERS, 2012, 100 (24)
  • [23] Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells
    Takeuchi, Hideo
    Asai, Souta
    Nakayama, Masaaki
    20TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 20), 2017, 906
  • [24] Chapter 8 Electronic and Optical Properties of III-V Nitride based Quantum Wells and Superlattices
    Morkoç, H.
    Hamdani, F.
    Salvador, A.
    Semiconductors and Semimetals, 1997, 50 (0C): : 193 - 257
  • [25] Polarization field effects on optical gain and lasing characteristics of III-V nitride and arsenide quantum wells
    Deligeorgis, G
    Dialynas, G
    Hatzopoulos, Z
    Pelekanos, N
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIII, 2005, 5722 : 400 - 409
  • [26] Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n ≤ 4) substrates
    Feng, JM
    Asai, K
    Narukawa, Y
    Kawakami, Y
    Fujita, S
    Ohachi, T
    APPLIED SURFACE SCIENCE, 2000, 159 : 532 - 539
  • [27] Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells
    Vehse, M
    Michler, P
    Gutowski, J
    Figge, S
    Hommel, D
    Selke, H
    Keller, S
    DenBaars, SP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) : 406 - 412
  • [28] Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells
    Wan, SP
    Xia, JB
    Chang, K
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) : 6210 - 6216
  • [29] Electronic structure and optical properties of GaN-Ga0.7Al0.3N quantum wells along the [0001] direction
    Bigenwald, P
    Christol, P
    Alemu, A
    Gil, B
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 119 - 123
  • [30] MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3μm
    Suemune, I
    Uesugi, K
    Sasikala, G
    Kurimoto, A
    Zhou, W
    Thilakan, P
    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 943 - 944
12345