Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study

被引：0
|
作者：
Hoat, D.M. [1 ,2 ]
Naseri, Mosayeb [3 ]
Hieu, Nguyen N. [4 ]
Ponce-Pérez, R. [5 ]
Rivas-Silva, J.F. [6 ]
Cocoletzi, Gregorio H. [6 ]
机构：
[1] Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam
[2] Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Viet Nam
[3] Department of Physics, Kermanshah Branch, Islamic Azad University, P.O. Box 6718997551, Kermanshah, Iran
[4] Institute of Research and Development, Duy Tan University, Da Nang,550000, Viet Nam
[5] Universidad Autónoma de Coahuila, Facultad de Ciencias Químicas, Ing. J. Cárdenas Valdez, Republica, Saltillo,Coahuila,25280, Mexico
[6] Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla,72570, Mexico
来源：
Superlattices and Microstructures | 2020年 / 137卷
关键词：
Silicon carbide;
D O I：
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