Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study

被引：0

作者：

Hoat, D.M. ^{[1
,2
]}

Naseri, Mosayeb ^{[3
]}

Hieu, Nguyen N. ^{[4
]}

Ponce-Pérez, R. ^{[5
]}

Rivas-Silva, J.F. ^{[6
]}

Cocoletzi, Gregorio H. ^{[6
]}

机构：

[1] Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam

[2] Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Viet Nam

[3] Department of Physics, Kermanshah Branch, Islamic Azad University, P.O. Box 6718997551, Kermanshah, Iran

[4] Institute of Research and Development, Duy Tan University, Da Nang,550000, Viet Nam

[5] Universidad Autónoma de Coahuila, Facultad de Ciencias Químicas, Ing. J. Cárdenas Valdez, Republica, Saltillo,Coahuila,25280, Mexico

[6] Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla,72570, Mexico

来源：

Superlattices and Microstructures | 2020年 / 137卷

关键词：

Silicon carbide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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