Ferroelectric thin films prepared by backside pulsed ion-beam evaporation

被引：0
|
作者：
Sonegawa, Tomihiro [1 ]
Arakaki, Toshiki [1 ]
Maehama, Takehiro [1 ]
Jiang, Weihua [2 ]
Yatsui, Kiyoshi [2 ]
机构：
[1] Department of Electrical and Electronic Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
[2] Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 2 B期
关键词：
Backside pulsed ion-beam evaporation - Ion beam parameters;
D O I：
10.1143/jjap.40.1049
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1049 / 1051
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