Characterization of CuInSe2 thin films prepared by ion-beam sputtering

被引：0
|
作者：
Zheng, Zhuang-hao [1 ]
Fan, Ping [1 ]
Zhang, Dong-ping [1 ]
Cai, Xing-Min [1 ]
Liang, Guang-xing [1 ]
机构：
[1] Shenzhen Univ, Inst Thin Film Phys & Applicat, Coll Phys Sci & Technol, Shenzhen 518060, Peoples R China
来源：
2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2 | 2009年
关键词：
CIS; Ion-beam sputtering; Substrate temperature; Annealing;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CuInSe2 (CIS) thin films were prepared by ion-beam sputtering at different substrate temperatures The films prepared at room temperature were annealed at different temperatures Films annealed at appropriate temperatures are dense, uniform and of single-phase
引用
收藏
页码：839 / 840
页数：2
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