Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter

被引：0

作者：

Kochoska, Sara ^{[1
]}

Franchi, Jimmy ^{[2
]}

Maslougkas, Sotirios ^{[2
]}

Domeij, Martin ^{[2
]}

Pham, Thanh-Toan ^{[2
]}

Sunkari, Swapna ^{[3
]}

Justice, Joshua ^{[3
]}

Das, Hrishikesh ^{[3
]}

机构：

[1] onsemi, Einsteinring 28, Aschheim,85609, Germany

[2] onsemi, Isafjordsgatan 32C, Kista,16440, Sweden

[3] onsemi, 82 Running Hill Rd, South Portland,ME,04106, United States

来源：

Defect and Diffusion Forum | 2024年 / 434卷

关键词：

PIN diodes - Power MOSFET;

D O I：

10.4028/p-wwb6HV

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

In this paper, the authors continue the experimental evaluation of bipolar degradation for different 1.2 kV SiC MOSFETs. All the devices are stressed by pulsed repetitive forward current through the body diode with current densities varying from 1000 A/cm2 up to 5000A/cm2. The 1.2kV SiC MOSFETs are split into two major groups based on the differences in epitaxial material(Type A and Type B) that are subjected to the pulsed forward current stress through the body diode. Additionally, there is a third group with Type B epitaxial material, where p+ implantation process at different temperature is applied to evaluate potential impact on bipolar degradation. Devices are electrically characterized on the Keysight B1505A power device analyzer, both before and after stress testing to trace the drift in the electric parameters. Lastly, the drift in parameters observed in some of the devices, are additionally correlated by an electroluminescence (EL) and scanning acoustic tomography (SAT) analysis. © 2024 The Author(s).

引用

页码：7 / 13

共 50 条

[41] Noise and Interface Density of Traps in 4H-SiC MOSFETs
Rumyantsev, S. L.
Levinshtein, M. E.
Ivanov, P. A.
Shur, M. S.
Palmour, J. W.
Agarwal, A. K.
Hull, B. A.
Ryu, S. H.
NOISE AND FLUCTUATIONS, 2009, 1129 : 341 - +
[42] 1400V 4H-SiC power MOSFETs
Agarwal, AK
Casady, JB
Rowland, LB
Valek, WF
Brandt, CD
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 989 - 992
[43] Short-Channel Effects in 4H-SiC MOSFETs
Noborio, M
Kanzaki, Y
Suda, J
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 821 - 824
[44] A nanoscale look in the channel of 4H-SiC lateral MOSFETs
Fiorenza, Patrick
Frazzetto, Alessia
Swansoni, Lukas K.
Giannazzo, Filippo
Roccaforte, Fabrizio
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 699 - +
[45] Investigation of drain current saturation in 4H-SiC MOSFETs
Pennington, G.
Potbhare, S.
Goldsman, N.
Habersat, D.
Lelis, A.
McGarrity, J.
Ashman, C.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 811 - +
[46] Demonstration of IMPATT diode oscillators in 4H-SiC
Yuan, L
Cooper, JA
Webb, KJ
Melloch, MR
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1359 - 1362
[47] A study of 4H-SiC diode avalanche shaper
Afanasyev, A. V.
Ivanov, B. V.
Ilyin, V. A.
Smirnov, A. A.
Kardo-Sysoev, A. F.
Shevchenko, S. A.
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
[48] Subnanosecond 4H-SiC diode current breakers
P. A. Ivanov
I. V. Grekhov
Semiconductors, 2012, 46 : 528 - 531
[49] A 2.7 kV 4H-SiC JBS Diode
HUANG Run-hua
LI Rui
CHEN Gang
LI Yun
电力电子技术, 2012, 46 (12) : 72 - 73
[50] 4H-SiC IMPATT diode fabrication and testing
Vassilevski, KV
Zorenko, AV
Zekentes, K
Tsagaraki, K
Bano, E
Banc, C
Lebedev, AA
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1353 - 1358

← 1 2 3 4 5 →