Influence of temperature on MOCVD growth of InGaN

被引：0

作者：

Wang, Lili ^{[1
]}

Wang, Hui ^{[1
]}

Sun, Xian ^{[1
]}

Wang, Hai ^{[1
]}

Zhu, Jianjun ^{[1
]}

Yang, Hui ^{[1
]}

Liang, Junwu ^{[1
]}

机构：

[1] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / SUPPL.期

关键词：

Chemical analysis - Film growth - Full width at half maximum - Growth temperature - Metallorganic chemical vapor deposition - Phase separation - Photoluminescence - Semiconducting gallium compounds - Thin films - X ray diffraction analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

InGaN thin films are grown on GaN/sapphire composite substrate by metalorganic chemical vapor deposition (MOCVD) between 550°C and 700°C. The effect of growth temperature on the properties of the InGaN films is studied by means of X-ray diffraction (XRD) and photoluminescence (PL). InGaN with higher In composition was obtained at a lower temperature. However, low growth temperature and high In composition degrade the crystal quality of InGaN. The XRD measurement indicated that there is no phase separation in the sample with In composition as high as 0.57. The PL peak energy shifts to lower energy with increasing In composition, and the full width at half width (FWHM) of the PL peak increases with increasing In composition.

引用

页码：257 / 259

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